J Dent Rehabil Appl Sci.  2017 Sep;33(3):178-188. 10.14368/jdras.2017.33.3.178.

Analysis of temperature changes and sterilization effect of diode laser for the treatment of peri-implantitis by wavelength and irradiation time

• Seol JH
• Lee JJ
• Kum KY
• Lee JH
• Lim YJ

• KMID: 2394641
• DOI: http://doi.org/10.14368/jdras.2017.33.3.178

Abstract

PURPOSE
We compared the effects of newly developed diode laser (Bison 808 nm Diode laser) on the treatment of peri-implantitis with conventional products (Picasso 810 nm Diode laser) by comparing the surface temperature of titanium disc and bacterial sterilization according to laser power.
MATERIALS AND METHODS
The titanium disc was irradiated for 60 seconds and 1 - 2.5 W using diode laser 808 nm and 810 nm. The surface temperature of the titanium disc was measured using a temperature measurement module and a temperature measurement program. In addition, in order to investigate the sterilizing effect according to the laser power, 808 nm laser was irradiated after application of bacteria to sandblasted large-grit acid-etched (SLA) and resorbable blast media (RBM) coated titanium discs. The irradiated disks were examined with scanning electron microscopy.
RESULTS
Both 808 nm and 810 nm lasers increased disk surface temperature as the power increased. When the 810 nm was irradiated under all conditions, the initial temperature rise rate, the descending rate, and the temperature change before and after was higher than that of 808 nm. Disk surface changes were not observed on both lasers at all conditions. Bacteria were irradiated with 808 nm, and the bactericidal effect was increased as the power increased.
CONCLUSION
When applying these diode lasers to the treatment of peri-implantitis, 808 nm which have a bactericidal effect with less temperature fluctuation in the same power conditions would be considered safer. However, in order to apply a laser treatment in the dental clinical field, various safety and reliability should be secured.

Keyword

peri-implantitis; diode laser; bacteria; titanium; temperature change

MeSH Terms

Bacteria
Lasers, Semiconductor*
Microscopy, Electron, Scanning
Peri-Implantitis*
Sterilization*
Titanium
Titanium

Figure

• 

  Fig. 1 Analysis for increment of disc temperature by conditions of laser. (A) Temperature increment trend of B808. (B) Temperature increment trend P810. ; 1 W, ; 1.5 W, ; 2 W, ; 2.5 W (n = 5). (C) Initial temperature change by laser power. (D) Temperature change range by laser power. ○; B808. ● P810. * P < 0.05.

• 

  Fig. 2 Analysis for decrement of disc temperature by conditions of laser. (A) Temperature decrement trend of B808. (B) Temperature decrement trend of P810. ; 1 W, ; 1.5 W, ; 2 W, ; 2.5 W (n = 5). (C) Initial temperature change by laser power. (D) Temperature change range by laser power. ○; B808. ●; P810. * P < 0.05.

• 

  Fig. 3 Surface morphology change of disc. (A) Disc surface before laser irradiation, (B) Disc surface after P810 at 2.5 W power condition. ×5000.

• 

  Fig. 4 Sterilizing effect of B808 at RBM surface treatment titanium disc. The arrows indicate the locations of individually attached bacteria. (A) RBM treated titanium disc without bacteria. (B) RBM treated titanium disc with bacteria. (C) RBM treated titanium disc with bacteria after 0.5 W laser power for 30 s condition. (D) RBM treated titanium disc with bacteria after 3 W laser power for 30 s condition. ×500.

• 

  Fig. 5 Sterilizing effect of B808 at SLA surface treatment titanium disc. The arrows indicate the locations of individually attached bacteria. (A) SLA treated titanium disc without bacteria. (B) SLA treated titanium disc with bacteria. (C) SLA treated titanium disc with bacteria after 0.5 W laser power for 30 s condition. (D) SLA treated titanium disc with bacteria after 3 W laser power for 30 s condition. ×500.

• 

  Fig. 6 Carbon contents of titanium disk surface according to power of B808. SLA coating, ■; RBM coating, □.

Reference

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